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Cree Announces Highest Power Silicon Carbide Schottky Rectifier For Inverter Applications
DURHAM, NC, FEBRUARY 9, 2007 — Cree, Inc. (Nasdaq: CREE), a market leader in silicon carbide (SiC) power semiconductors, today announced that it is shipping production quantities of a new 50-amp Zero RecoveryВ® Schottky rectifier operating at 1200 volts. Details... more »
 
ADG1222: Low Capacitance, Low Charge Injection, ±15 V/+12 V iCMOS® Dual SPST Switch
The ADG1221/ADG1222/ADG1223 are monolithic, complementary metal-oxide semiconductor (CMOS) devices containing four independently selectable switches designed on an iCMOS (industrial CMOS) process. iCMOS is a modular manufacturing process combining high voltage CMOS and bipolar technologies. Details... more »
 
ADG1221: Low Capacitance, Low Charge Injection, ±15 V/+12 V iCMOS® Dual SPST Switch
The ADG1221/ADG1222/ADG1223 are monolithic, complementary metal-oxide semiconductor (CMOS) devices containing four independently selectable switches designed on an iCMOS (industrial CMOS) process. iCMOS is a modular manufacturing process combining high voltage CMOS and bipolar technologies. Details... more »
 
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