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100W GaN-on-silicon RF power transistor enters volume production

100W GaN-on-silicon RF power transistor enters volume production
RF power transistor vendor Nitronex has developed a 28V, 100W-class gallium nitride on silicon (GaN-on-silicon) HEMT for applications operating between 2.1- and 2.7-GHz.
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2007-08-21 19:04:00
 
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